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Thursday, July 30, 2020 | History

2 edition of Metal contacts to indium phosphide (110) surfaces. found in the catalog.

Metal contacts to indium phosphide (110) surfaces.

Vincent Montgomery

Metal contacts to indium phosphide (110) surfaces.

by Vincent Montgomery

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  • 13 Currently reading

Published by The Author] in [S.l .
Written in English


Edition Notes

Thesis (D.Phil.) - New University of Ulster, 1982.

The Physical Object
Pagination229p.
Number of Pages229
ID Numbers
Open LibraryOL13872761M

phosphide is formed at the metal-InP interface. In what follows, we will present the results of our investigations into the electrical and metallurgical behavior of the above mentioned contact systems on InP. We will also discuss the relationship between the formation of a given nickel phosphide at the metal-InP interface and the. Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide [clarification needed] at °C., [5] also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium .

  Indium Metal Page 1 of 6 INDIUM METAL SAFETY DATA SHEET SECTION 1. IDENTIFICATION Product Identity: Indium Metal Trade Names and Synonyms: None. Manufacturer: Teck Metals Ltd. Trail Operations Trail, British Columbia V1R 4L8 Emergency Telephone: Supplier: In U.S.: Teck American Metal Sales Incorporated North Riverpoint Blvd.   4. The method of claim 3 wherein said contact metal p-type dopant is zinc. 5. The method of claim 1 wherein said first and second regions of contact metal are formed on the surface of said indium phosphide by utilizing a soldering iron to apply said contact metal to said surface. 6.

Cobalt-metal and tungsten carbide powders are produced widely in high purity for use in the hard-metal industry, in the manufacture of superalloys and for other applications. [Superalloys are alloys usually based on group VIIIA elements (iron, cobalt, nickel) developed for elevated temperature use, where relatively severe mechanical stressing is encountered and where high surface stability is. What is Indium phosphide (InP)? Introduction: • It is a binary semiconductor which is composed of indium and phosphorus. • It is face-centered cubic crystal structure as shown in the figure • It is identical to GaAs and other III-V semiconductors • Indium phosphide preparation is carried out at o C with reaction of white.


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Metal contacts to indium phosphide (110) surfaces by Vincent Montgomery Download PDF EPUB FB2

Surface Science () North-Holland, Amsterdam METAL CONTACTS TO SEMICONDUCTORS, INDIUM PHOSPHIDE AND CADMIUM TELLURIDE R H WILLIAMS, LM DHARMADASA, M H, PATTERSON*, C MAANI** and N M FORSYTH Plnsics Department, Universitv College, PO Cardiff, UK Received 10 Juneaccepted for publication 12 July The Cited by: Home Books DTIC ADA A Study of Metal-Semiconductor Contacts on Indium Phosphide.

Home Books DTIC ADA A Study of Metal-Semiconductor Contacts on Indium Phosphide. General Information. Studies on Vanadium based Schottky Contacts to n-type Indium Phosphide. by Sankar Naik, S. (Author), Rajagopal Reddy, V. (Author) ISBN ISBN Why is ISBN important. ISBN. This bar-code number lets you verify that you're getting exactly the right version or edition of a book.

Author: Sankar Naik, S. Detailed studies, using a range of experimental techniques, are described of the interfaces formed between metals and the semiconductors silicon and indium phosphide.

For contacts between Ag or Au and cleaved () Si the existence of thin adlayers of oxygen or chlorine at the interface makes little difference to the magnitude of the Schottky barrier formed, although the adlayers totally Cited Metal contacts to indium phosphide book   This report describes the research accomplished during the last twelve months of a month program of research on metal contacts to the semiconductor indium phosphide (InP).

The Schottky barrier energy phi sub B and the contact resistance r(c) were measured for several metal-InP structures and the electrical properties were correlated to the metallurgical properties obtained Author: G Y Robinson.

This report describes the research accomplished during the first eight months of a 20 month program of research on metal semiconductor contacts to indium phosphide (InP). The Schottky barrier energy Phi sub B and contact resistance are correlated to the metallurgical behavior of metal/InP contacts by using Auger electron spectroscopy.

This report describes the research accomplished during the last twelve months of a month program of research on metal contacts to the semiconductor indium phosphide (InP). The Schottky barrier energy phi sub B and the contact resistance r(c) were measured for several metal-InP structures and the electrical properties were correlated to the metallurgical properties obtained with Auger electron.

months of a month program of research on metal contacts to the semi-conductor indium phosphide (InP). The Schottky barrier energy 'h and the contact resistance r/c were measured for several metal-InP structures and the electrical properties were correlated to the metallurgical properties obtained with Auger electron spectroscopy (AES).

metal-() indium phosphide contact that had the silver selectively removed to leave small point contacts of silver. The contact covering the grain structure of figure 3(d) was found to present a considerably lower device resistance ( Q) when contrasted with that covering the grain-free indium phosphide ( Q), figure 3(e).

This research program is a experimental study of metal/semi-conductor contacts on indium phosphide. The pimary objective of the program is to determine the fundamental parameters which control the electrical and metallurgical properties of the metal/ InP interface. The principal experimental tools of.

Book Search tips Selecting this option will search all publications across the Scitation platform Selecting this option will search all publications for the Publisher/Society in Low resistance silver contacts to indium phosphide: Electrical and metallurgical considerations the formation of a phosphide layer at the metal‐InP interface.

A process for forming low resistance ohmic contacts on indium phosphide (InP) avoids the usual problem of high temperature annealing. The method comprises passing a current between two contacts of a suitably chosen metallic conductor that is doped so as to be the same conductivity type as the underlining semiconductor.

Passage of the current causes the contacts to combine with the. The results of the experiments are compared to similar experiments for metal contacts to indium phosphide. The observations are discussed in terms of various theories of Schottky barrier formation and in particular we consider the defect model and its applicability to CdTe and InP.

The electrical and metallurgical behavior of the Ag‐InP contact system has been investigated. Specific contact resistivity (Rc) values in the low 10−6 Ω cm2 range are readily achieved on n‐InP (Si: × cm−3) after sintering at °C for several minutes.

The low Rc values, however, are shown to be accompanied by dissolution of InP into the metallization, resulting in device. Surface Science 89 () North-Holland Publishing Company THE INFLUENCE OF INTERMEDIATE ADSORBED LAYERS ON THE METAL CONTACTS FORMED TO INDIUM PHOSPHIDE CRYSTALS V.

MONTGOMERY, A. McKINLEY and R.H. WILLIAMS School of Physical Sciences, The New University of Ulster, Coleraine, Northern Ireland Received 16 March. specifically related to ohmic contacts they have been placed in appendix I.

()Literature Review ()Advantages of Indium Phosphide devices Indium Phosphide has many advantages in fundamental properties compared with silicon. It shares some of.

Indium phosphide is new semiconductor material of zinc blend structure, which have two kinds, monocrystal and polycrystal. InP is gray rod, ingot, piece, wafer or powder, which is soft.

Indium(II) phosphide faintly dissolve in inorganic acids. Indium metal is the raw material. improve metal contacts on aluminium gallium indium phosphide (AlGaInP) light-emitting diodes (LEDs) [Dae-Hyun Kim et al, Jpn.

Appl. Phys., vol55, p, ]. In particular, the research team added a tantalum diffusion barrier to lock in beryllium-alloy atoms in gold-based contacts on p-type GaP. AlGaInP LEDs emit in the wavelength range. Indium Phosphide (InP) Substrates Vital supplies high quality Indium Phosphide (InP) wafers, from 2”to 4” in diameter for telecommunications and microelectronics applications.

InP wafer are provided un-doped, Fe-doped, S-doped, and Zn-doped. IARC: 2A - Group 2A: Probably carcinogenic to humans (Indium phosphide). ACGIH: No component of this product present at levels greater than or equal to % is identified as a carcinogen or potential carcinogen by ACGIH.

NTP: No component of this product present at levels greater than or. Materials used in semiconductor include various tellurium compound, arsenic compound, cadmium compound, indium compound and so on. They are compound and grew under strict condition to avoid of their purity is above %.

Some models could be customized according to request like calcium tellurium.If you have questions about the indium supply or applications for indium metal, alloys or chemicals, please contact Claire Mikolajczak at [email protected] or Donna Vareha-Walsh at [email protected] phosphide is composed of indium metal and phosphorus.

It is a byproduct created when isolating other base-metals such as zinc, copper, lead, and tin. [1,2] It may also be referred to as InP; see the Hazardous Substances Data Bank (HSDB) for other names and synonyms.